PART |
Description |
Maker |
MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs 880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs 880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MRF9085 MRF9085LR3 MRF9085LSR3 |
128K 3.3 VOLT SERIAL CONFIGURATION PROM 880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
SKY77458 |
Front-End Module for LTE / EUTRAN Band VIII (Tx 880-915 MHz), (Rx 925-960 MHz)
|
Skyworks Solutions Inc.
|
SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62703-Q1094 SFH486 |
From old datasheet system GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MRF21120 |
MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETs The RF Sub-Micron MOSFET Line RF Power Field Effect Trasistor N-Channel Enhancement-Mode Lateral MOSFET
|
Motorola, Inc
|
MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
SKY77195 |
Dual-Band PA Module for WCDMA / HSDPA Band I (1920-1980 MHz) and Band VIII (880-915 MHz)
|
Skyworks Solutions Inc.
|